TSMC has reportedly partnered with National Yang Ming Chiao Tung University, based in Taipei, Taiwan, to create an “atomically thin” transistor interface that could push chips beyond current boundaries and make them much more efficient than what’s available today. Atomically-thin semiconductors are not necessarily a new idea, but they have had a roadblock that has kept them from making any meaningful ground toward being a reality.
That is until TSMC and NYCU developed their new strategy for atomically-thin semiconductors. The two have developed a new atomic interface that controls the flow of electrons. The main issue with current interfaces that handle this job that a choice has to be made between strengthening the control over the transistor gate, or protecting the electrons moving through the transistor. TSMC and NYCU’s efforts have reportedly it possible to do both, something which wasn’t possible to do until now.
The new atomic interface created by TSMC and NYCU goes beyond finding better materials
As the report mention, for a while researchers have been trying to find ways to make improvements to atomically-thin transistors by looking for improved materials. While this is still hailed as an important step in the process by researchers, just as important is making improvements to the atomic boundary which helps to control materials, as TSMC and NYCU researchers have discovered.
By re-designing the interface connecting the semiconductor and the gate dielectric, the team of researchers was able to prevent interactions between the dielectric and the semiconductor. This results in the electrons moving more efficiently across the transistor and leads to overall more efficient chips. The report mentions that production of this tech at a mass scale is still a long way off. However, its development proves to be a potentially huge breakthrough in creating smaller and more efficient chips for use in smaller devices.
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